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APTM50DAM17G
Boost chopper MOSFET Power Module
VBUS CR1
VDSS = 500V RDSon = 17m typ @ Tj = 25C ID = 180A @ Tc = 25C
Application * * * AC and DC motor control Switched Mode Power Supplies Power Factor Correction
OUT
Features
Q2
*
G2
S2
0/VBUS
* * * Benefits
S2 G2
VBUS
0/VBUS
OUT
Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* * * * * Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Max ratings 500 180 135 720 30 20 1250 51 50 3000 Unit V A V m W A mJ
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM50DAM17G - Rev 2
July, 2006
APTM50DAM17G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Typ
Tj = 25C
T j = 125C
VGS = 10V, ID = 90A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
17 3
Max 400 2000 20 5 200
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 180A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 180A R G = 0.5 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 180A, R G = 0.5 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 180A, R G = 0.5
Min
Typ 28 5.6 0.36 560 160 280 21 38 75 93 4140 3380 6224 4052
Max
Unit nF
nC
ns
J
J
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=600V Tj = 25C Tj = 125C Tc = 70C
Min 600
Typ
Max 500 1000
Unit V A A
IF = 180A IF = 360A IF = 180A IF = 180A VR = 400V di/dt = 600A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
180 1.6 1.9 1.4 130 170 660 2760
1.8 V
Qrr
Reverse Recovery Charge
nC
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APTM50DAM17G - Rev 2
July, 2006
trr
Reverse Recovery Time
ns
APTM50DAM17G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.1 0.32 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTM50DAM17G - Rev 2
July, 2006
APTM50DAM17G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 800 ID, Drain Current (A) 600
VGS=10&15V 7V
600 ID, Drain Current (A)
8V
Transfert Characteristics
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
500 400 300 200 100 0
400
6.5V 6V 5.5V 5V
TJ=25C
200 0 0
TJ=125C
TJ=-55C
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
25
0
2
4
6
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 180 ID, DC Drain Current (A) 250 160 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (C) 150
July, 2006
RDS(on) Drain to Source ON Resistance
1.1
1.05
Normalized to VGS=10V @ 90A V GS=10V
1
V GS=20V
0.95
0.9 0 50 100 150 200 ID, Drain Current (A)
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APTM50DAM17G - Rev 2
APTM50DAM17G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000
limited by R DSon
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
100 us VGS=10V ID=90A
I D, Drain Current (A)
100
1 ms
10
Single pulse TJ =150C TC=25C
10 ms 100 ms
1 1 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 Gate Charge (nC)
July, 2006
VDS=400V
ID=180A TJ=25C
VDS=100V VDS=250V
1000 Crss 100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APTM50DAM17G - Rev 2
APTM50DAM17G
Delay Times vs Current 80 70 td(on) and t d(off) (ns) 60 50 40 30 20 10 40 80 120 160 200 240 ID, Drain Current (A) 280
V DS=333V RG=0.5 T J=125C L=100H
Rise and Fall times vs Current 160 140 120 t r and tf (ns) 100 80 60 40 20 0 40 80 120 160 200 240 ID, Drain Current (A) 280
VDS=333V RG=0.5 TJ=125C L=100H
td(off)
tf
tr
td(on)
Switching Energy vs Current 12 Switching Energy (mJ) 10 8 6 4 2 0 40 80 120 160 200 240 ID, Drain Current (A) 280 Eon Switching Energy (mJ)
VDS=333V RG=0.5 T J=125C L=100H
Switching Energy vs Gate Resistance 20 16 12 8 4 0 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
TJ=150C VDS=333V ID=180A TJ=125C L=100H
Eoff
Eon
Eoff
Eoff
Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 160 I D, Drain Current (A)
Hard switching ZVS ZCS VDS=333V D=50% RG=0.5 TJ=125C TC=75C
IDR, Reverse Drain Current (A)
450
100
TJ=25C
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM50DAM17G - Rev 2
Microsemi reserves the right to change, without notice, the specifications and information contained herein

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